Influence of LDD spacers on total ionizing dose response of the transconductance for bulk MOSFETs working at cryogenic temperatures

In this work, the radiation responses of 0.25 μm bulk transistors irradiated up to 300 krad are discussed. The electricals characteristics shown measured after irradiation at 95 K, 150 and K. transconductance improves significantly with total ionizing dose (TID) low temperature does not vary room temperature. impact incomplete ionization impurities introduced into Lightly Doped Drain extensions is examined. Since increase more pronounced for shortest transistors, positive charges trapped in spacer oxides likely constitute source increase. Technology Computer-Aided Design simulations help us discuss influence charge build-up spacers' locations on drain resistance. By means a resistivity analysis, LDD doping level operating TID response devices analyzed. Its potential evolution technological integration investigated.